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1X505 3007A L2730 SG1527A P1020 121M100 6N137 NJM2524
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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1360
*
DESCRIPTION *With TO-126 package *Complement to type 2SC3423 *High transition frequency APPLICATIONS *Audio frequency amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -5 1.2 W UNIT V V V mA mA
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-10mA ; VCE=-10V 80 MIN -150
2SA1360
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT
TYP.
MAX
UNIT V
-1.0 -0.8 -0.1 -0.1 240 2.5 200
V V A A
pF MHz
hFE Classifications O 80-160 Y 120-240
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1360
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1360
4


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